Second-order optical susceptibility of biased quantum wells in the interband regime
نویسندگان
چکیده
منابع مشابه
Large interband second-order susceptibilities in InxGa12xN/GaN quantum wells
We present measurements of second-harmonic generation in interband transitions of InxGa12xN/GaN multiple quantum well samples. The second-order susceptibility x (2) is studied as a function of pump wavelength and quantum well width. For the narrowest wells, we obtain x (2) 51.360.4310 m/V, which is an order of magnitude larger than the intrinsic value for bulk GaN. The corresponding power conve...
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Quantum wells are thin layered semiconductor structures in which we can observe and control many quantum mechanical effects. They derive most of their special properties from the quantum confinement of charge carriers (electrons and "holes") in thin layers (e.g 40 atomic layers thick) of one semiconductor "well" material sandwiched between other semiconductor "barrier" layers. They can be made ...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 1995
ISSN: 0163-1829,1095-3795
DOI: 10.1103/physrevb.51.13192